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DIF065SIC020
DIOTEC
ES-P/N
1998-0128-8

Silicon Carbide MOSFET N-Channel 650V/150A,
550W, RDS(on) 20mΩ Max, Kelvin Source for
Fast Switching and Reduced Noise Level at Gate
Qty.Break
THB
1
>
811.40
3
>
751.70
5
>
731.80
10
>
696.90
30
>
664.50
Stock on hand    
25

  Data Sheet
More detail
P6SMBJ40CA
DIOTEC
ES-P/N
1998-0125-2

TVS Diode 600W, Breakdown Voltage 44.4V - 49.3V
(Min-Max), Bidirectional, Stand-Off Voltage 64.5V
Qty.Break
THB
5
>
2.59
10
>
2.39
50
>
2.19
100
>
2.08
500
>
1.91
1,000
>
1.84
3,000
>
1.71
Stock on hand    
2,998

  Data Sheet
More detail
DIW120SIC028
DIOTEC
ES-P/N
1998-0137-9

Silicon Carbide MOSFET N-Channel 1200V/100A,
517W, RDS(on) 27.4mΩ Max
Qty.Break
THB
1
>
805.00
3
>
759.70
5
>
739.50
10
>
704.30
30
>
671.60
Stock on hand    
27

  Data Sheet
More detail
SI06C065D1
DIOTEC
ES-P/N
1998-0141-1

Silicon Carbide Schottky Diode 650V/6A
Qty.Break
THB
1
>
49.14
5
>
42.75
10
>
40.79
50
>
37.84
100
>
36.12
500
>
33.05
Stock on hand    
0

  Data Sheet
More detail
TPSMA6L15A
DIOTEC
ES-P/N
1998-0127-6

TVS Diode 600W, Breakdown Voltage 16.7V - 18.5V
(Min-Max), Unidirectional, Stand-Off Voltage 15V
Qty.Break
THB
5
>
2.19
10
>
2.03
50
>
1.86
100
>
1.77
500
>
1.63
1,000
>
1.56
3,000
>
1.47
Stock on hand    
2,390

  Data Sheet
More detail
DIF120SIC022
DIOTEC
ES-P/N
1998-0130-5

Silicon Carbide MOSFET N-Channel 1200V/120A,
580W, RDS(on) 22.3mΩ Max, Kelvin Source for
Fast Switching and Reduced Noise Level at Gate
Qty.Break
THB
1
>
705.60
3
>
666.60
5
>
636.30
10
>
612.50
30
>
580.00
Stock on hand    
30

  Data Sheet
More detail
SIT10C065
DIOTEC
ES-P/N
1998-0143-4

Silicon Carbide Schottky Diode 650V/10A
Qty.Break
THB
1
>
42.85
5
>
37.28
10
>
35.57
50
>
33.00
100
>
31.50
500
>
28.93
Stock on hand    
46

  Data Sheet
More detail
DIW065SIC015
DIOTEC
ES-P/N
1998-0134-3

Silicon Carbide MOSFET N-Channel 650V/150A,
550W, RDS(on) 15mΩ Max
Qty.Break
THB
1
>
813.10
3
>
767.30
5
>
747.00
10
>
711.40
30
>
678.40
Stock on hand    
25

  Data Sheet
More detail
DIF065SIC030
DIOTEC
ES-P/N
1998-0129-1

Silicon Carbide MOSFET N-Channel 650V/105A,
357W, RDS(on) 30mΩ Max, Kelvin Source for
Fast Switching and Reduced Noise Level at Gate
Qty.Break
THB
1
>
500.60
3
>
482.20
5
>
463.80
10
>
445.30
30
>
416.20
Stock on hand    
12

  Data Sheet
More detail
DIF120SIC028
DIOTEC
ES-P/N
1998-0131-7

Silicon Carbide MOSFET N-Channel 1200V/100A,
517W, RDS(on) 27.4mΩ Max
Qty.Break
THB
1
>
805.00
3
>
759.70
5
>
739.50
10
>
704.30
30
>
671.60
Stock on hand    
30

  Data Sheet
More detail
Page 95 of 1535
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