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Semiconductors - Discrete
 
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P6SMBJ48A
DIOTEC
ES-P/N
1998-0144-6

TVS Diode 600W, Breakdown Voltage 53.3V - 59.2V
(Min-Max), Unidirectional, Stand-Off Voltage 48V
Qty.Break
THB
5
>
2.55
10
>
2.36
50
>
2.16
100
>
2.05
500
>
1.89
1,000
>
1.82
3,000
>
1.69
Stock on hand    
0

  Data Sheet
More detail
P6SMBJ130CA
DIOTEC
ES-P/N
1998-0123-8

TVS Diode 600W, Breakdown Voltage 144V - 160V
(Min-Max), Bidirectional, Stand-Off Voltage 130V
Qty.Break
THB
5
>
2.55
10
>
2.36
50
>
2.16
100
>
2.05
500
>
1.89
1,000
>
1.82
3,000
>
1.69
Stock on hand    
0

  Data Sheet
More detail
P6SMBJ170A
DIOTEC
ES-P/N
1998-0124-1

TVS Diode 600W, Breakdown Voltage 189V - 210V
(Min-Max), Unidirectional, Stand-Off Voltage 170V
Qty.Break
THB
5
>
2.55
10
>
2.36
50
>
2.16
100
>
2.05
500
>
1.89
1,000
>
1.82
3,000
>
1.69
Stock on hand    
0

  Data Sheet
More detail
P6SMBJ40CA
DIOTEC
ES-P/N
1998-0125-2

TVS Diode 600W, Breakdown Voltage 44.4V - 49.3V
(Min-Max), Bidirectional, Stand-Off Voltage 64.5V
Qty.Break
THB
5
>
2.55
10
>
2.36
50
>
2.16
100
>
2.05
500
>
1.89
1,000
>
1.82
3,000
>
1.69
Stock on hand    
0

  Data Sheet
More detail
P6SMBJ43CA-AQ
DIOTEC
ES-P/N
1998-0126-4

TVS Diode 600W, Breakdown Voltage 47.8V - 53.1V
(Min-Max), Bidirectional, Stand-Off Voltage 43V,
AEC-Q101 Qualified
Qty.Break
THB
1
>
6.45
10
>
4.90
50
>
4.49
100
>
4.28
500
>
3.97
1,000
>
3.79
3,000
>
3.52
Stock on hand    
0

  Data Sheet
More detail
TPSMA6L15A
DIOTEC
ES-P/N
1998-0127-6

TVS Diode 600W, Breakdown Voltage 16.7V - 18.5V
(Min-Max), Unidirectional, Stand-Off Voltage 15V
Qty.Break
THB
5
>
2.36
10
>
2.18
50
>
2.00
100
>
1.90
500
>
1.75
1,000
>
1.68
3,000
>
1.56
Stock on hand    
0

  Data Sheet
More detail
DIF065SIC020
DIOTEC
ES-P/N
1998-0128-8

Silicon Carbide MOSFET N-Channel 650V/150A,
550W, RDS(on) 20mΩ Max, Kelvin Source for
Fast Switching and Reduced Noise Level at Gate
Qty.Break
THB
1
>
821.00
3
>
774.80
5
>
754.30
10
>
718.40
30
>
685.00
Stock on hand    
0

  Data Sheet
More detail
DIF065SIC030
DIOTEC
ES-P/N
1998-0129-1

Silicon Carbide MOSFET N-Channel 650V/105A,
357W, RDS(on) 30mΩ Max, Kelvin Source for
Fast Switching and Reduced Noise Level at Gate
Qty.Break
THB
1
>
516.00
3
>
497.00
5
>
478.00
10
>
452.70
30
>
429.00
Stock on hand    
0

  Data Sheet
More detail
DIF120SIC022
DIOTEC
ES-P/N
1998-0130-5

Silicon Carbide MOSFET N-Channel 1200V/120A,
580W, RDS(on) 22.3mΩ Max, Kelvin Source for
Fast Switching and Reduced Noise Level at Gate
Qty.Break
THB
1
>
716.30
3
>
663.50
5
>
645.90
10
>
621.80
30
>
588.80
Stock on hand    
0

  Data Sheet
More detail
DIF120SIC028
DIOTEC
ES-P/N
1998-0131-7

Silicon Carbide MOSFET N-Channel 1200V/100A,
517W, RDS(on) 27.4mΩ Max
Qty.Break
THB
1
>
829.70
3
>
783.00
5
>
762.30
10
>
726.00
30
>
692.30
Stock on hand    
0

  Data Sheet
More detail
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