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Home > Manufacturer > NXP/NEXPERIA/WEEN > Semiconductors - Discrete

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Semiconductors - Discrete

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All Items (36)New Products (0)Recommend (0)Hot Deal (0)Promotion (0)Clearance Sale (0)

NXP/NEXPERIA/WEEN

ES-P/N

0016-0477-4

Thyristor: SCR Sensitive Gate 400V/0.8A(RMS)

Gate Trigger Current 12uA Max.

Qty.Break

THB

1

>

6.82

10

>

5.18

50

>

4.75

100

>

4.53

500

>

4.12

1,000

>

3.95

Stock on hand

0

NXP/NEXPERIA/WEEN

ES-P/N

0016-0473-6

Thyristor: SCR Sensitive Gate 400V/0.8A(RMS)

Gate Trigger Current 12uA Max.

Qty.Break

THB

1

>

4.73

10

>

3.78

100

>

3.22

500

>

2.97

1,000

>

2.82

2,000

>

2.68

Stock on hand

35,790

NXP/NEXPERIA/WEEN

ES-P/N

0016-0421-7

Sensitive Gate 4 Quadrant Triac, Repeatitive Peak

Off-State Voltage 600V, RMS On-State Current 4A

Gate Trigger Current 10mA.

Qty.Break

THB

1

>

8.27

10

>

6.29

50

>

5.63

100

>

5.39

500

>

5.00

1,000

>

4.73

Stock on hand

1,665

NXP/NEXPERIA/WEEN

ES-P/N

0016-0419-1

P-Channel Trench MOSFET 12V/8.2A,

Power Dissipation 1.7W, RDS(on) 20mΩ Max,

Low Threshold Voltage

Qty.Break

THB

1

>

8.96

5

>

7.16

10

>

6.81

25

>

6.38

50

>

6.09

100

>

5.84

500

>

5.34

Stock on hand

2,471

PESD15VS2UT,215

NXP/NEXPERIA/WEEN

ES-P/N

0016-0373-2

Double ESD Protections Diodes 160W

Breakdown Voltage 18V(Typ),Uni-directional

Common Anode,Reverse Stand-Off Voltage 15V

Qty.Break

THB

5

>

4.20

25

>

3.85

50

>

3.66

100

>

3.49

500

>

3.24

1,000

>

3.09

3,000

>

2.89

Stock on hand

4,076

NXP/NEXPERIA/WEEN

ES-P/N

0016-0377-1

Trench MOSFET N-Channel 60V/360mA

RDS(on) 1Ω Typ.

Qty.Break

THB

10

>

1.41

100

>

1.20

500

>

1.07

1,000

>

1.05

3,000

>

0.98

9,000

>

0.91

Stock on hand

33,613

NXP/NEXPERIA/WEEN

ES-P/N

0016-0378-2

Trench MOSFET P-Channel 50V/180mA, 350mW

RDS(on) 4.5Ω Typ.

Qty.Break

THB

5

>

1.98

50

>

1.50

100

>

1.41

500

>

1.29

1,000

>

1.24

3,000

>

1.16

Stock on hand

15,068

NXP/NEXPERIA/WEEN

ES-P/N

0016-0367-7

High Speed Switching Diodes 75V/200mA, trr 4ns

(Repetitive Peak Reverse Voltage 100V Max.)

Qty.Break

THB

10

>

1.16

50

>

1.02

100

>

0.98

500

>

0.89

1,000

>

0.86

2,500

>

0.81

Stock on hand

2,860

PESD12VL1BA,115

NXP/NEXPERIA/WEEN

ES-P/N

0016-0368-9

ESD Protections Diodes 200W,Bidirectional

Breakdown Voltage 15.9V(Typ)

Reverse Stand-Off Voltage 12V

Qty.Break

THB

5

>

4.92

50

>

4.28

100

>

4.08

500

>

3.79

1,000

>

3.62

3,000

>

3.36

Stock on hand

1,249

NXP/NEXPERIA/WEEN

ES-P/N

0016-0365-3

Schottky Barrier Single Diode 30V/200mA

Ultra high-speed switching

Qty.Break

THB

10

>

3.42

100

>

2.91

500

>

2.68

1,000

>

2.55

3,000

>

2.39

9,000

>

2.28

Stock on hand

835

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