| Picture | ES Part No. | Part no | Stock | Price | Datasheet | Pb Free | RoHS | Description | FET Type | Continuous Drain Current (Id@25(C)) | RDS(on) (Max) @ Id,Vgs | Drain - Source Voltage | Series | VGS(th) @Id | Package / Case | Vendor |
| | | | | | | | | | | | | | | | |
 | 1998-0040-4 | DI020N06D1 | 2,224 | 11.25 |  | PB-Free | RoHS | Power MOSFET N-Channel 60V/20A, Maximum Power Dissipation 45W, RDS(on) 35mΩ Max | N-channel | 20A | 35mΩ @20A,10V | 60V | - | 1.2 - 2.5V @250uA | DPAK (TO-252) | DIOTEC |
 | 1998-0073-9 | 2N7002 | 3,442 | 0.87 | | PB-Free | RoHS | MOSFET N-Channel 60V/280mA, Maximum Power Dissipation 350mW RDS(on) 5Ω Max. | N-channel | 0.28A | 5000mΩ @0.5A,10V | 60V | - | 1 - 2.5V @250uA | SOT-23-3 (SOT-346) | DIOTEC |
| 1998-0101-8 | MMFTN4520 | 170 | 3.86 | | PB-Free | RoHS | MOSFET N-Channel 150V/1000mA, Maximum Power Dissipation 960mW RDS(on) 1.2Ω Max. | N-channel | 1A | 1200mΩ @1A,10V | 150V | - | 1 - 3V @250uA | SOT-23-3 (SOT-346) | DIOTEC |
| 1998-0102-1 | 2N7002A | 0 | 0.82 | | PB-Free | RoHS | MOSFET N-Channel 60V/280mA, Maximum Power Dissipation 350mW, RDS(on) 2Ω Max. | N-channel | 0.28A | 2000mΩ @0.5A,10V | 60V | - | 1 - 2.5V @250uA | SOT-23-3 (SOT-346) | DIOTEC |
 | 1998-0103-2 | DI048N04PQ2-AQ | 0 | 20.32 | | PB-Free | RoHS | Dual N-Channel Power MOSFET 40V/36A, Maximum Power Dissipation 24W, RDS(on) 9.6mΩ Max, AEC-Q101 Qualified | 2 N-channel | 36A | 9.6mΩ @12A,10V | 40V | - | 1 - 2.5V @250uA | TDSON-8-4 | DIOTEC |
 | 1998-0104-4 | DI050N04PT | 0 | 14.83 | | PB-Free | RoHS | N-Channel Power MOSFET 40V/50A, Maximum Power Dissipation 30W, RDS(on) 5.7mΩ Max. | N-channel | 50A | 5.7mΩ @10A,10V | 40V | - | 1 - 2.5V @250uA | QFN-8 | DIOTEC |
 | 1998-0105-6 | DI280N10TL | 0 | 70.54 | | PB-Free | RoHS | N-Channel Power MOSFET 100V/280A, Maximum Power Dissipation 425W, RDS(on) 2mΩ Max. | N-channel | 280A | 2mΩ @50A,10V | 100V | - | 2.3 - 4.2V @250uA | HSOF-8 | DIOTEC |
| 1998-0107-1 | MMBT7002K | 0 | 0.82 | | PB-Free | RoHS | MOSFET N-Channel 60V/300mA, Maximum Power Dissipation 350mW, RDS(on) 3Ω Max, ESD Protected Gate | N-channel | 0.3A | 3000mΩ @0.5A,10V | 60V | - | 1 - 2.5V @250uA | SOT-23-3 (SOT-346) | DIOTEC |
| 1998-0108-2 | MMFTN123 | 0 | 1.66 | | PB-Free | RoHS | MOSFET N-Channel 100V/170mA, Maximum Power Dissipation 360mW RDS(on) 6Ω Max. | N-channel | 0.17A | 6000mΩ @0.17A,10V | 100V | - | 0.8 - 2V @1mA | SOT-23-3 (SOT-346) | DIOTEC |
| 1998-0109-4 | MMFTN3402 | 0 | 1.80 | | PB-Free | RoHS | MOSFET N-Channel 30V/1.9A, Maximum Power Dissipation 350mW RDS(on) 55mΩ Max. | N-channel | 1.9A | 55mΩ @4A,10V | 30V | - | 0.6 - 1.4V @250uA | SOT-23-3 (SOT-346) | DIOTEC |
| 1998-0110-9 | MMFTP5618 | 0 | 5.67 | | PB-Free | RoHS | MOSFET P-Channel 60V/1.25A, Maximum Power Dissipation 500mW, RDS(on) 170mΩ Max. | P-channel | 1.25A | 170mΩ @1.25A,10V | 60V | - | 1 - 3V @250uA | SOT-23-3 (SOT-346) | DIOTEC |
| 1998-0111-1 | MMFTP5618-AQ | 0 | 6.30 | | PB-Free | RoHS | MOSFET P-Channel 60V/1.25A, Maximum Power Dissipation 500mW RDS(on) 170mΩ Max, AEC-Q101 Qualified | P-channel | 1.25A | 170mΩ @1.25A,10V | 60V | - | 1 - 3V @250uA | SOT-23-3 (SOT-346) | DIOTEC |
 | 1998-0128-8 | DIF065SIC020 | 0 | 821.00 | | PB-Free | RoHS | Silicon Carbide MOSFET N-Channel 650V/150A, 550W, RDS(on) 20mΩ Max, Kelvin Source for Fast Switching and Reduced Noise Level at Gate | N-Channel | 150A | 20mΩ @75A,18V | 650V | - | 2 - 4V @22mA | TO-247-4L | DIOTEC |
| 1998-0129-1 | DIF065SIC030 | 0 | 516.00 | | PB-Free | RoHS | Silicon Carbide MOSFET N-Channel 650V/105A, 357W, RDS(on) 30mΩ Max, Kelvin Source for Fast Switching and Reduced Noise Level at Gate | N-Channel | 105A | 30mΩ @75A,18V | 650V | - | 2 - 4V @23.5mA | TO-247-4L | DIOTEC |
| 1998-0130-5 | DIF120SIC022 | 0 | 716.30 | | PB-Free | RoHS | Silicon Carbide MOSFET N-Channel 1200V/120A, 580W, RDS(on) 22.3mΩ Max, Kelvin Source for Fast Switching and Reduced Noise Level at Gate | N-Channel | 120A | 22.3mΩ @75A,18V | 1200V | - | 2 - 4V @23.5mA | TO-247-4L | DIOTEC |
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