ѷ Ť͹Ԥ ӡѴ
Categories
Semiconductors - Discrete
 
EXICON
ES-P/N
0819-0002-9

Lateral MOSFETS N-Channel, 8A, 200V, 125W
Forward Transfer Admittance 2S(Max.)@3A, Vds 10V,
for High Quality Audio Amplifier Applications
Qty.Break
THB
1
>
266.80
5
>
246.40
10
>
237.00
25
>
222.10
Stock on hand    
750

EXICON
ES-P/N
0819-0003-1

Lateral MOSFETS P-Channel, 8A, 200V, 125W
Forward Transfer Admittance 2S(Max.)@3A, Vds 10V,
for High Quality Audio Amplifier Applications
Qty.Break
THB
1
>
266.80
5
>
246.40
10
>
237.00
25
>
222.10
Stock on hand    
750

ES-P/N
0176-2156-4

Power MOSFET N-Channel, 600V/30A,
Power Dissipation 305W
RDS(on) 0.115Ω(Typ.)
Qty.Break
THB
1
>
92.02
5
>
80.39
10
>
78.94
25
>
74.58
50
>
71.19
100
>
67.80
250
>
65.14
Stock on hand    
555

ES-P/N
0176-2159-1

Power MOSFET N-Channel 60V/68A,
Power Dissipation 39W (MAX),
RDS(on) 4.2mΩ Typ. at Vgs 10V
Qty.Break
THB
1
>
24.00
5
>
21.96
10
>
20.88
25
>
19.56
50
>
19.20
100
>
18.48
250
>
17.40
500
>
16.62
Stock on hand    
100

TAIWAN SEMICONDUCTOR
ES-P/N
0029-0182-1

Schottky Barrier Rectifier Diode 100V/3A
Peak Forward Surge Current 70A
Green Compound (Halogen-Free)
Qty.Break
THB
1
>
7.25
5
>
5.80
10
>
5.51
25
>
5.31
50
>
5.05
100
>
4.82
500
>
4.38
1,000
>
4.21
Stock on hand    
0

ES-P/N
0087-0408-1

MOSFET N-Channel 60V/100A, Power Dissipation 45W
RDS(on) 2.2mΩ (Typ.) at VGS 10V, U-MOS VIII-H
Qty.Break
THB
1
>
45.80
5
>
39.84
10
>
38.01
25
>
36.64
50
>
35.26
100
>
33.66
Stock on hand    
0