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Product Category | Electronics Source
Home > Manufacturer > ONSEMI > Semiconductors - Discrete
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Semiconductors - Discrete
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Semiconductors - Discrete
 
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SZESD9X12ST5G
ONSEMI
ES-P/N
0235-0969-9

ESD Protection Diode, Breakdown Voltage 13.5V(Min)
Unidirectional, Working Peak Reverse Voltage 12V,
IEC61000-4-2 Level 4 ESD Protection, AEC-Q101
Qty.Break
THB
1
>
5.80
10
>
4.64
25
>
4.25
50
>
4.04
100
>
3.85
250
>
3.71
Stock on hand    
12,500

  Data Sheet
More detail
FSV12100V
ONSEMI
ES-P/N
0235-0951-1

Ultra-Low VF Schottky Rectifier Diode,
Peak Repetitive Reverse Voltage 100V, Average
Rectified Peak Forward Surge Current 12A
Qty.Break
THB
1
>
25.47
5
>
23.30
10
>
22.16
50
>
20.37
100
>
19.61
250
>
18.21
Stock on hand    
4,990

  Data Sheet
More detail
SZNUP2105LT1G
ONSEMI
ES-P/N
0235-0935-2

27V ESD Protection Diode, Dual Line CAN Bus
Protector, IEC 61000-4-2/4/5 Compatibility, Dual
Bidirectional, Breakdown 32V(Max.), AEC-Q101
Qty.Break
THB
5
>
2.82
10
>
2.61
50
>
2.39
100
>
2.27
500
>
2.09
Stock on hand    
0

  Data Sheet
More detail
NRVB120VLSFT1G
ONSEMI
ES-P/N
0235-0934-1

Schottky Power Rectifier Diode 20V/1A
Qty.Break
THB
1
>
29.56
5
>
27.05
10
>
25.72
25
>
24.09
50
>
23.20
Stock on hand    
18

  Data Sheet
More detail
2N7002KW
ONSEMI
ES-P/N
0235-0899-4

MOSFET N-Channel 60V/310mA, 300mW,
RDS(on) 1.6Ω Max.
Qty.Break
THB
5
>
3.20
10
>
2.96
50
>
2.71
100
>
2.58
500
>
2.33
Stock on hand    
3,474

  Data Sheet
More detail
2N7002ET1G
ONSEMI
ES-P/N
0235-0891-8

Small Signal MOSFET N-Channel 60V/260mA, 300mW,
RDS(on) 2.5Ω Max.
Qty.Break
THB
5
>
1.79
50
>
1.36
100
>
1.31
500
>
1.16
1,000
>
1.12
Stock on hand    
19,261

  Data Sheet
More detail
MBR0540T1G
ONSEMI
ES-P/N
0235-0892-1

Schottky Power Rectifier Diode 40V/0.5A
Qty.Break
THB
5
>
2.37
25
>
2.09
50
>
2.01
100
>
1.91
250
>
1.82
500
>
1.76
Stock on hand    
473

  Data Sheet
More detail
NRVB10100MFST1G
ONSEMI
ES-P/N
0235-0873-6

Schottky Barrier Rectifier Diode 100V/10A
Qty.Break
THB
1
>
37.37
5
>
33.25
10
>
31.76
25
>
30.45
Stock on hand    
0

  Data Sheet
More detail
NSVMMUN2233LT3G
ONSEMI
ES-P/N
0235-0866-9

NPN Digital Transistor 100mA/50V, 246mW
Built-in Bias Resistor 4.7KΩ and 47KΩ,
(AEC-Q101 Qualified)
Qty.Break
THB
10
>
3.47
50
>
3.09
100
>
2.95
250
>
2.83
500
>
2.72
1,000
>
2.59
Stock on hand    
0

  Data Sheet
More detail
SZSM05T1G
ONSEMI
ES-P/N
0235-0867-1

ESD Protection Diode Array, Dual Common Anode,
Breakdown Voltage 6.2V - 7.3V (Min-Max),
Unidirectional, Working Peak Reverse Voltage 5V
Qty.Break
THB
1
>
11.40
5
>
9.12
10
>
8.66
50
>
7.57
100
>
7.43
500
>
6.70
Stock on hand    
5

  Data Sheet
More detail
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